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STW69N65M5-4 - TO-247-3 HiP

STW69N65M5-4

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STMicroelectronics

N-CHANNEL 650 V, 0.037 OHM TYP., 58 A MDMESH M5 POWER MOSFET IN A TO247-4 PACKAGE

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STW69N65M5-4 - TO-247-3 HiP

STW69N65M5-4

Active
STMicroelectronics

N-CHANNEL 650 V, 0.037 OHM TYP., 58 A MDMESH M5 POWER MOSFET IN A TO247-4 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW69N65M5-4
Current - Continuous Drain (Id) @ 25°C58 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs143 nC
Input Capacitance (Ciss) (Max) @ Vds6420 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-4
Power Dissipation (Max)330 W
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device PackageTO-247-4L
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 11.17
10$ 7.80
100$ 6.51

Description

General part information

STW69N65M5-4 Series

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.