TSM200N03DPQ33

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Taiwan Semiconductor Corporation

30V, 20A, DUAL, N-CHANNEL LOW VOLTAGE MOSFETS

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Taiwan Semiconductor Corporation

30V, 20A, DUAL, N-CHANNEL LOW VOLTAGE MOSFETS

Technical Specifications

Parameters and characteristics for this part

Specification	TSM200N03DPQ33

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	4.1 nC
Input Capacitance (Ciss) (Max) @ Vds	345 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	20 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-PDFN (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power - Max	Rds On (Max) @ Id, Vgs	Configuration	Mounting Type	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Taiwan Semiconductor Corporation TSM200N03DPQ33	8-PowerWDFN	20 A	-55 °C	150 °C	30 V	4.1 nC	20 W	20 mOhm	2 N-Channel	Surface Mount	MOSFET (Metal Oxide)	2.5 V	8-PDFN (3x3)	345 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	15000	$ 0.61

General part information

Mosfet Array 30V 20A (Tc) 20W (Tc) Surface Mount 8-PDFN (3x3)

Technical documentation and resources