Description
General part information
BSZ215 Series
Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ215CHXTMA1 |
|---|---|
| Configuration | P-Channel Complementary, N |
| Current - Continuous Drain (Id) (Typical) | 5.1 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| FET Feature Drive Voltage | 2.5 V |
| Gate Charge (Max) | 2.8 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 419 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSDSON-8 |
| Power - Max | 2.5 VA |
| Qualification | AEC-Q101 |
| Rds On (Max) | 55 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.4 V |
Pricing
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