Specification	SQJ433EP-T1_GE3

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	108 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4877 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max)	8.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQJ433 Series

Part	Gate Charge (Max)	Package / Case	Vgs(th) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Grade	Mounting Type	Input Capacitance (Ciss) (Max)	Vgs (Max)	Rds On (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	Power Dissipation (Max)
Vishay Dale SQJ433EP-T1_GE3	108 nC	PowerPAK® SO-8	2.5 V	PowerPAK® SO-8	75 A	Automotive	Surface Mount	4877 pF	20 V	8.1 mOhm	MOSFET (Metal Oxide)	10 V	4.5 V	P-Channel	30 V	-55 °C	175 °C	AEC-Q101	83 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources