Specification	IPB80P04P4L08ATMA1

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	92 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	5430 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3-2
Power Dissipation (Max)	75 W
Qualification	AEC-Q101
Rds On (Max)	7.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2.2 V

IPB80P Series

Part	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Grade	Vgs (Max)	Power Dissipation (Max)	FET Type	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package Name	Qualification	Package / Case	Rds On (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
INFINEON IPB80P03P405ATMA1	10300 pF	4 V	-55 °C	175 °C	MOSFET (Metal Oxide)	30 V	80 A	Automotive	20 V	137 W	P-Channel	130 nC	10 V	Surface Mount	PG-TO263-3-2	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.7 mOhm
INFINEON IPB80P04P407ATMA1	6085 pF	4 V	-55 °C	175 °C	MOSFET (Metal Oxide)	40 V	80 A	Automotive	20 V	88 W	P-Channel	89 nC	10 V	Surface Mount	PG-TO263-3-2	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7.4 mOhm
INFINEON IPB80P03P4L04ATMA1	11300 pF	2 V	-55 °C	175 °C	MOSFET (Metal Oxide)	30 V	80 A	Automotive		137 W	P-Channel	160 nC		Surface Mount	PG-TO263-3-2	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.1 mOhm	-16 V	5 V	10 V	4.5 V
INFINEON IPB80P03P4L07ATMA1	5700 pF	2 V	-55 °C	175 °C	MOSFET (Metal Oxide)	30 V	80 A	Automotive		88 W	P-Channel	80 nC 80 nC		Surface Mount	PG-TO263-3-2	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6.9 mOhm	-16 V	5 V	10 V	4.5 V
INFINEON IPB80P04P405ATMA2	10300 pF	4 V	-55 °C	175 °C	MOSFET (Metal Oxide)	40 V	80 A	Automotive	20 V	125 W	P-Channel	151 nC		Surface Mount	PG-TO263-3-2	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5.2 mOhm
INFINEON IPB80P04P405ATMA1	10300 pF	4 V	-55 °C	175 °C	MOSFET (Metal Oxide)	40 V	80 A	Automotive	20 V	125 W	P-Channel	151 nC	10 V	Surface Mount	PG-TO263-3-2	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.9 mOhm 4.9 mOhm
INFINEON IPB80P03P4L04ATMA2	11300 pF	2 V	-55 °C	175 °C	MOSFET (Metal Oxide)	30 V	80 A	Automotive		137 W	P-Channel	160 nC		Surface Mount	PG-TO263-3-2	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.4 mOhm 4.4 mOhm	-16 V	5 V
INFINEON IPB80P04P4L06ATMA1	6580 pF	2.2 V	-55 °C	175 °C	MOSFET (Metal Oxide)	40 V	80 A	Automotive	16 V	88 W	P-Channel	104 nC 104 nC		Surface Mount	PG-TO263-3-2	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6.4 mOhm			10 V	4.5 V
INFINEON IPB80P04P4L08ATMA1	5430 pF	2.2 V	-55 °C	175 °C	MOSFET (Metal Oxide)	40 V	80 A	Automotive	16 V	75 W	P-Channel	92 nC		Surface Mount	PG-TO263-3-2	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7.9 mOhm			10 V	4.5 V

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IPB80P04P4L08ATMA1 | Datasheet