Specification	SIR140DP-T1-RE3

Current - Continuous Drain (Id) (Ta)	71.9 A
Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	170 nC
Input Capacitance (Ciss) (Max)	8150 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	104 W, 6.25 W
Rds On (Max)	0.67 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.1 V

SIR140 Series

Part	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Technology	Mounting Type	Input Capacitance (Ciss) (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Vgs(th) (Max)	Gate Charge (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SIR140DP-T1-RE3	N-Channel	25 V	6.25 W 104 W	PowerPAK® SO-8	MOSFET (Metal Oxide)	Surface Mount	8150 pF	-16 V	20 V	2.1 V	170 nC	0.67 mOhm	71.9 A	100 A	-55 °C	150 °C	PowerPAK® SO-8	10 V	4.5 V

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