IPP05N03LA

Obsolete

Infineon Technologies

MOSFET N-CH 25V 80A TO220-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 25V 80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP05N03LA

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	3110 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs [Max]	4.9 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Mounting Type	Technology
Infineon Technologies IPP05N03LA	-55 °C	175 ░C	2 V	4.9 mOhm	PG-TO220-3	TO-220-3	20 V	25 V	3110 pF	4.5 V 10 V	25 nC	N-Channel	94 W	Through Hole	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 80A (Tc) 94W (Tc) Through Hole PG-TO220-3

Technical documentation and resources