Specification	SSM6K824R,LF

Current - Continuous Drain (Id) (Ta)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	3.6 nC
Input Capacitance (Ciss) (Max)	410 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	6-TSOP-F
Power Dissipation (Max)	1.5 W
Rds On (Max)	33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SSM6K824R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs

Part	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package / Case	Power Dissipation (Max)	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Package Name	FET Type	Gate Charge (Max)	Operating Temperature	Technology
Toshiba Semiconductor and Storage SSM6K824R,LF	410 pF	33 mOhm	6-SMD Flat Leads	1.5 W	1 V	4.5 V	1.5 V	Surface Mount	8 V	20 V	6 A	6-TSOP-F	N-Channel	3.6 nC	150 °C	MOSFET (Metal Oxide)

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