Specification	IPD160N04LGBTMA1

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	1200 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	31 W
Rds On (Max)	16 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

IPD160N Series

Part	Package Name	FET Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max)	Rds On (Max)	Gate Charge (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type
INFINEON IPD160N04LGBTMA1	PG-TO252-3	N-Channel	30 A	10 V	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1200 pF	MOSFET (Metal Oxide)	40 V	20 V	2 V	16 mOhm	15 nC	31 W	-55 °C	175 °C	Surface Mount

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