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INFINEON IPT020N10N3ATMA1

IPT020N10N3ATMA1

NRND
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 300 A, 0.0017 OHM, HSOF, SURFACE MOUNT

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INFINEON IPT020N10N3ATMA1

IPT020N10N3ATMA1

NRND
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 300 A, 0.0017 OHM, HSOF, SURFACE MOUNT

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Description

General part information

IPT020 Series

Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT020N10N3ATMA1
Current - Continuous Drain (Id) (Tc)300 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)156 nC, 156 nC
Input Capacitance (Ciss) (Max)11200 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerSFN
Package NamePG-HSOF-8-1
Power Dissipation (Max)375 W
Rds On (Max)2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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