DMP2042UCB4-7
ObsoleteDiodes Inc
20V P-CHANNEL ENHANCEMENT MODE MOSFET
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DMP2042UCB4-7
ObsoleteDiodes Inc
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP2042UCB4-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [custom] | 4.5 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 2.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 218 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 4-UFBGA, WLBGA |
| Power Dissipation (Max) [Max] | 1.4 W |
| Rds On (Max) @ Id, Vgs | 45 mOhm |
| Supplier Device Package | U-WLB1010-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | -6 V |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMP2042UCB4 Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management.
Documents
Technical documentation and resources