JANTX2N6058

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Microchip Technology

DARLINGTON NPN SILICON POWER 80V 100V, 12A

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JANTX2N6058

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Microchip Technology

DARLINGTON NPN SILICON POWER 80V 100V, 12A

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Description Specifications Series Pricing CAD Documents

Description

General part information

JANTX2N6058-Darlington Series

This specification covers the performance requirements for NPN silicon power Darlington, 2N6058 and 2N6059 transistors. Three levels of product assurance are (JAN, JANTX and JANTXV) provided for each encapsulated device as specified in MIL-PRF-19500/502.

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX2N6058

Current - Collector (Ic) (Max)	12 A
Current - Collector Cutoff (Max)	1 mA
DC Current Gain (hFE) (Min)	1000
Grade	Military
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-3, TO-204AA
Package Name	TO-3
Power - Max	150 W
Qualification	502, MIL-PRF-19500
Transistor Type	NPN, Darlington
Vce Saturation (Max)	3 V
Voltage - Collector Emitter Breakdown (Max)	80 V

JANTX2N6058-Darlington Series

Darlington NPN Silicon Power 80V 100V, 12A

Part	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	Package / Case	Current - Collector Cutoff (Max)	Package Name	DC Current Gain (hFE) (Min)	Grade	Power - Max	Current - Collector (Ic) (Max)	Vce Saturation (Max)	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Mounting Type
Microchip Technology JANTX2N6058	-55 °C	175 °C	502 MIL-PRF-19500	TO-204AA TO-3	1 mA	TO-3	1000	Military	150 W	12 A	3 V	80 V	Darlington NPN	Through Hole

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

2N6058 and 2N6059