Specification	C3M0120090J

Current - Continuous Drain (Id) (Tc)	22 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	17.3 nC
Input Capacitance (Ciss) (Max)	350 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	TO-263-7, D2PAK
Power Dissipation (Max)	83 W
Rds On (Max)	155 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	18 V
Vgs(th) (Max)	3.5 V

C3M0120090 Series

Part	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	FET Type	Vgs(th) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Package / Case	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max) Positive	Vgs (Max) Negative	Rds On (Max)	Power Dissipation (Max)	Package Leads
Wolfspeed, Inc. C3M0120090D	414 pF	-55 °C	150 °C	SiCFET (Silicon Carbide)	N-Channel	3.5 V	TO-247-3	23 A	TO-247-3	17.3 nC	15 V	Through Hole	900 V	18 V	-8 V	155 mOhm	97 W
Wolfspeed, Inc. C3M0120090J-TR	350 pF	-55 °C	150 °C	SiCFET (Silicon Carbide)	N-Channel	3.5 V	D2PAK TO-263-7	22 A		17.3 nC	15 V	Surface Mount	900 V	18 V	-8 V	155 mOhm	83 W	7 Leads
Wolfspeed, Inc. C3M0120090J	350 pF	-55 °C	150 °C	SiCFET (Silicon Carbide)	N-Channel	3.5 V	D2PAK TO-263-7	22 A		17.3 nC	15 V	Surface Mount	900 V	18 V	-8 V	155 mOhm	83 W	7 Leads

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