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IPB65R110CFDATMA1 - PG-TO263-3

IPB65R110CFDATMA1

Obsolete
Infineon Technologies

TRANS MOSFET N-CH 650V 31.2A 3-PIN(2+TAB) D2PAK T/R AUTOMOTIVE AEC-Q101

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IPB65R110CFDATMA1 - PG-TO263-3

IPB65R110CFDATMA1

Obsolete
Infineon Technologies

TRANS MOSFET N-CH 650V 31.2A 3-PIN(2+TAB) D2PAK T/R AUTOMOTIVE AEC-Q101

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB65R110CFDATMA1
Current - Continuous Drain (Id) @ 25°C31.2 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]118 nC
Input Capacitance (Ciss) (Max) @ Vds3240 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]277.8 W
Rds On (Max) @ Id, Vgs110 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPB65R110 Series

Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Documents

Technical documentation and resources