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BSC100N10NSFGATMA1 - PG-TDSON-8-1

BSC100N10NSFGATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 10 MOHM;

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Search across all available documentation for this part.

BSC100N10NSFGATMA1 - PG-TDSON-8-1

BSC100N10NSFGATMA1

Active
Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 10 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC100N10NSFGATMA1
Current - Continuous Drain (Id) @ 25°C90 A, 11.4 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]44 nC
Input Capacitance (Ciss) (Max) @ Vds2900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)156 W
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device PackagePG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.85
10$ 1.85
100$ 1.27
500$ 1.03
1000$ 0.95
2000$ 0.88
Digi-Reel® 1$ 2.85
10$ 1.85
100$ 1.27
500$ 1.03
1000$ 0.95
2000$ 0.88
Tape & Reel (TR) 5000$ 0.88
NewarkEach (Supplied on Cut Tape) 1$ 2.65
10$ 1.71
25$ 1.53
50$ 1.35
100$ 1.18
250$ 1.06
500$ 0.94
1000$ 0.87

Description

General part information

BSC100 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources

No documents available