WND60P16WQ

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WeEn Semiconductors

DIODE GEN PURP 1.6KV 60A TO247-2

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WeEn Semiconductors

DIODE GEN PURP 1.6KV 60A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	WND60P16WQ

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.12 V

DIODE GEN PURP 1.6KV 60A TO247-2

Part	Technology	Mounting Type	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Supplier Device Package
WeEn Semiconductors WND60P16WQ	Standard	Through Hole	60 A	150 °C	-55 °C	TO-247-2	Standard Recovery >500ns	200 mA	1.12 V	50 µA	TO-247-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1600 V 60A Through Hole TO-247-2

Technical documentation and resources

No documents available