IXTF230N085T

Obsolete

IXYS

MOSFET N-CH 85V 130A I4PAC

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Obsolete

IXYS

MOSFET N-CH 85V 130A I4PAC

Technical Specifications

Parameters and characteristics for this part

Specification	IXTF230N085T

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	187 nC
Input Capacitance (Ciss) (Max) @ Vds	9900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	5.3 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology
IXYS IXTF230N085T	i4-Pac™-5	ISOPLUS i4-PAC™	9900 pF	20 V	10 V	200 W	187 nC	-55 °C	175 ░C	130 A	5.3 mOhm	N-Channel	Through Hole	4 V	85 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 85 V 130A (Tc) 200W (Tc) Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available