TST10H200CW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 5A TO220AB

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 5A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	TST10H200CW

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	910 mV

Part	Technology	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package
Taiwan Semiconductor Corporation TST10H200CW	Schottky	200 mA 500 ns	100 µA	910 mV	Through Hole	5 A	TO-220-3	200 V	150 °C	-55 °C	TO-220AB
Taiwan Semiconductor Corporation TST10H150CW	Schottky	200 mA 500 ns		880 mV	Through Hole	5 A	TO-220-3		150 °C	-55 °C	TO-220AB
Taiwan Semiconductor Corporation TST10H100CW	Schottky	200 mA 500 ns	100 µA	700 mV	Through Hole	5 A	TO-220-3	100 V	150 °C	-55 °C	TO-220AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.50

General part information

Diode 200 V 5A Through Hole TO-220AB

Technical documentation and resources