FMMT723QTA

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON,

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Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON,

Technical Specifications

Parameters and characteristics for this part

Specification	FMMT723QTA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	625 mW
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	330 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PNP, 100V, 1A, SOT23

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Transistor Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc FMMT723QTA	100 nA	250	Surface Mount	330 mV	200 MHz	PNP	625 mW	100 V	SOT-23-3	SC-59 SOT-23-3 TO-236-3	1 A	-55 °C	150 °C
Diodes Inc FMMT723TA	100 nA	250	Surface Mount	330 mV	200 MHz	PNP	625 mW	100 V	SOT-23-3	SC-59 SOT-23-3 TO-236-3	1 A	-55 °C	150 °C
Diodes Inc FMMT723TC	100 nA	250	Surface Mount	330 mV	200 MHz	PNP	625 mW	100 V	SOT-23-3	SC-59 SOT-23-3 TO-236-3	1 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 100V, 1A, SOT23

Technical documentation and resources