Specification	IRFIBE20GPBF

Current - Continuous Drain (Id) (Tc)	1.4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	38 nC
Input Capacitance (Ciss) (Max)	530 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Package Name	TO-220-3
Power Dissipation (Max)	30 W
Rds On (Max)	6.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFIBE20 Series

Part	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Gate Charge (Max)	Power Dissipation (Max)	Mounting Type	Package / Case	Vgs (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Rds On (Max)
Vishay Dale IRFIBE20GPBF	MOSFET (Metal Oxide)	800 V	10 V	530 pF	1.4 A	TO-220-3	38 nC	30 W	Through Hole	Isolated Tab TO-220-3 Full Pack	20 V	N-Channel	-55 °C	150 °C	4 V	6.5 Ohm
Vishay Dale IRFIBE20G	MOSFET (Metal Oxide)	800 V	10 V	530 pF	1.4 A	TO-220-3	38 nC	30 W	Through Hole	Isolated Tab TO-220-3 Full Pack	20 V	N-Channel	-55 °C	150 °C	4 V	6.5 Ohm

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