LSC04065Q8

Obsolete

Diodes Inc

DIODE SIL CARB 650V 4A DFN8080

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Obsolete

Diodes Inc

DIODE SIL CARB 650V 4A DFN8080

Technical Specifications

Parameters and characteristics for this part

Specification	LSC04065Q8

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	170 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	4-PowerTSFN
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DFN8080
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

SiC Diode

Part	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed
Diodes Inc LSC04065Q8	DFN8080	Surface Mount	650 V	0 ns	1.7 V	4-PowerTSFN	SiC (Silicon Carbide) Schottky	170 µA	4 A	175 ░C	-55 C	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

SiC Diode

Technical documentation and resources