AOK20N60L

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO247

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	AOK20N60L

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3680 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	417 W
Rds On (Max) @ Id, Vgs	370 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Switching Energy	Td (on/off) @ 25°C [Max]	Power - Max [Max]	Gate Charge	Vce(on) (Max) @ Vge, Ic	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)
Alpha & Omega Semiconductor Inc. AOK20N60L	10 V	600 V	370 mOhm	TO-247	N-Channel	20 A	MOSFET (Metal Oxide)	417 W	4.5 V	3680 pF	TO-247-3	-55 °C	150 °C	74 nC	30 V	Through Hole
Alpha & Omega Semiconductor Inc. AOK20B135E1				TO-247							TO-247-3	-55 °C	175 ░C			Through Hole	40 A	800 µJ	134 ns	250 W	58 nC	2.3 V	15 Ohm 15 V 20 A 600 V	1350 V	80 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly