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STL5N80K5 - 8 PowerVDFN

STL5N80K5

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STMicroelectronics

N-CHANNEL 800 V, 1.45 OHM TYP., 3 A MDMESH K5 POWER MOSFET IN A POWERFLAT 5X6 VHV PACKAGE

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STL5N80K5 - 8 PowerVDFN

STL5N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 1.45 OHM TYP., 3 A MDMESH K5 POWER MOSFET IN A POWERFLAT 5X6 VHV PACKAGE

Deep-Dive with AI

DocumentsDatasheet+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL5N80K5
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]5 nC
Input Capacitance (Ciss) (Max) @ Vds177 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)38 W
Rds On (Max) @ Id, Vgs1.75 Ohm
Supplier Device PackagePowerFlat™ (5x6) VHV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.75
6000$ 0.75

Description

General part information

STL5N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.