Description
General part information
BSD223 Series
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSD223PH6327XTSA1 |
|---|---|
| Channel Count | 2 |
| Configuration | P-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 390 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 0.62 nC |
| Input Capacitance (Ciss) (Max) | 56 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-VSSOP, SOT-363, SC-88 |
| Package Name | PG-SOT363-6-1 |
| Power - Max | 250 mW |
| Rds On (Max) | 1.2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.2 V |
Pricing
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CAD
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