TK35N65W,S1F
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.08 Ω@10V, TO-247, DTMOSⅣ
TK35N65W,S1F
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.08 Ω@10V, TO-247, DTMOSⅣ
Description
General part information
TK35N65W Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.08 Ω@10V, TO-247, DTMOSⅣ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK35N65W,S1F |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 35 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 100 nC |
| Input Capacitance (Ciss) (Max) | 4100 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Power Dissipation (Max) | 270 W |
| Rds On (Max) | 80 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TK35N65W,S1F | Datasheet
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
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TK35N65W Data sheet/Japanese
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Simplified CFD Model Application Note
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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Selection Guide MOSFETs 2025 Rev1.0