PSMN1R9-80SSEJ

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Nexperia USA Inc.

MOSFETS NEXTPOWER 100 V, 2.07 MOHM, 267 AMP, N-CHANNEL MOSFET IN LFPAK88 PACKAGE

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PSMN1R9-80SSEJ

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Nexperia USA Inc.

MOSFETS NEXTPOWER 100 V, 2.07 MOHM, 267 AMP, N-CHANNEL MOSFET IN LFPAK88 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN1R9-80SSE Series

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R9-80SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R9-80SSEJ

Current - Continuous Drain (Id) (Tc)	286 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	232 nC
Input Capacitance (Ciss) (Max)	17140 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-1235
Package Name	LFPAK88 (SOT1235)
Power Dissipation (Max)	340 W
Rds On (Max)	1.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.6 V

PSMN1R9-80SSE Series

N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88

Part	Vgs(th) (Max)	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Gate Charge (Max)	Rds On (Max)	Mounting Type	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	FET Type	Package Name
Nexperia USA Inc. PSMN1R9-80SSEJ	3.6 V	20 V	SOT-1235	10 V	286 A	17140 pF	340 W	232 nC	1.9 mOhm	Surface Mount	MOSFET (Metal Oxide)	-55 °C	175 °C	80 V	N-Channel	LFPAK88 (SOT1235)