Specification	SI1405BDH-T1-GE3

Current - Continuous Drain (Id) (Tc)	1.6 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	5.5 nC
Input Capacitance (Ciss) (Max)	305 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	SC-70-6
Power Dissipation (Max)	2.27 W, 1.47 W
Rds On (Max)	112 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

SI1405 Series

Part	Power Dissipation (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	FET Type	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Package Name	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)
Vishay Dale SI1405BDH-T1-E3	1.47 W 2.27 W	6-TSSOP SC-88 SOT-363	-55 °C	150 °C	4.5 V	1.8 V	MOSFET (Metal Oxide)	P-Channel	Surface Mount	112 mOhm	950 mV	5.5 nC	1.6 A	8 V	SC-70-6	8 V	305 pF
Vishay Dale SI1405BDH-T1-GE3	1.47 W 2.27 W	6-TSSOP SC-88 SOT-363	-55 °C	150 °C	4.5 V	1.8 V	MOSFET (Metal Oxide)	P-Channel	Surface Mount	112 mOhm	950 mV	5.5 nC	1.6 A	8 V	SC-70-6	8 V	305 pF

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