Specification	SI3590DV-T1-E3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	1.7 A
Current - Continuous Drain (Id) (Typical)	2.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	4.5 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power - Max	830 mW
Rds On (Max)	77 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.5 V

SI3590 Series

Part	Vgs(th) (Max)	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Drain to Source Voltage (Vdss)	Rds On (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Gate Charge (Max)	Configuration	Technology	Package Name	FET Feature	Power - Max
Vishay Dale SI3590DV-T1-E3	1.5 V	2.5 A	1.7 A	30 V	77 mOhm	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C	Surface Mount	4.5 nC	N P-Channel	MOSFET (Metal Oxide)	6-TSOP	Logic Level Gate	830 mW

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