STI17NF25

Obsolete

STMicroelectronics

MOSFET N-CH 250V 17A I2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 250V 17A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STI17NF25

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	29.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs [Max]	165 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STI17NF25	165 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	90 W	250 V	20 V	29.5 nC	N-Channel	4 V	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	1000 pF	17 A	I2PAK	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 17A (Tc) 90W (Tc) Through Hole I2PAK

Technical documentation and resources