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STMICROELECTRONICS STGP6NC60HD

IRFZ44EPBF

Obsolete
INFINEON

POWER MOSFET, N CHANNEL, 60 V, 48 A, 0.023 OHM, TO-220AB, THROUGH HOLE

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STMICROELECTRONICS STGP6NC60HD

IRFZ44EPBF

Obsolete
INFINEON

POWER MOSFET, N CHANNEL, 60 V, 48 A, 0.023 OHM, TO-220AB, THROUGH HOLE

Find alt

Description

General part information

IRFZ44 Series

The IRFZ44EPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFZ44EPBF
Current - Continuous Drain (Id) (Tc)48 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)60 nC
Input Capacitance (Ciss) (Max)1360 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220AB
Power Dissipation (Max)110 W
Rds On (Max)23 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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