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RN2103MFV - Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/22 kΩ, SOT-723(VESM)

SSM3K15AMFV,L3F

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Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-723(VESM)

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RN2103MFV - Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/22 kΩ, SOT-723(VESM)

SSM3K15AMFV,L3F

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-723(VESM)

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Description

General part information

SSM3K15AMFV Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-723(VESM)

Technical Specifications

Parameters and characteristics for this part

SpecificationSSM3K15AMFV,L3F
Current - Continuous Drain (Id) (Ta)100 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max)13.5 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-723
Package NameVESM
Power Dissipation (Max)150 mW
Rds On (Max)3.6 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)1.5 V

Pricing

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CAD

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