Specification	SQM200N04-1M1L_GE3

Current - Continuous Drain (Id) (Tc)	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	413 nC, 413 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	20655 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	6 Leads
Package Name	TO-263-7, D2PAK
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max)	1.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQM200 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Gate Charge (Max)	Grade	Mounting Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Rds On (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Qualification	Input Capacitance (Ciss) (Max)	Vgs (Max)	FET Type	Package Leads	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SQM200N04-1M1L_GE3	10 V	4.5 V	MOSFET (Metal Oxide)	413 nC 413 nC	Automotive	Surface Mount	375 W	-55 °C	175 °C	2.5 V	1.1 mOhm	D2PAK TO-263-7	200 A	40 V	AEC-Q101	20655 pF	20 V	N-Channel	6 Leads
Vishay Dale SQM200N04-1M8_GE3			MOSFET (Metal Oxide)	310 nC	Automotive	Surface Mount	375 W	-55 °C	175 °C	3.5 V	1.8 mOhm	D2PAK TO-263-7	200 A	40 V	AEC-Q101	17350 pF	20 V	N-Channel	6 Leads	10 V

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