Specification	SIR878DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	43 nC
Input Capacitance (Ciss) (Max)	1250 pF, 1250 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	44.5 W, 5 W
Rds On (Max)	14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.8 V

SIR878 Series

Part	Package Name	Rds On (Max)	Package / Case	FET Type	Input Capacitance (Ciss) (Max)	Technology	Vgs(th) (Max)	Gate Charge (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SIR878ADP-T1-GE3	PowerPAK® SO-8	14 mOhm	PowerPAK® SO-8	N-Channel	1275 pF	MOSFET (Metal Oxide)	2.8 V	42 nC	Surface Mount	10 V	4.5 V	-55 °C	150 °C	100 V	5 W 44.5 W	20 V	40 A
Vishay Dale SIR878DP-T1-GE3	PowerPAK® SO-8	14 mOhm	PowerPAK® SO-8	N-Channel	1250 pF 1250 pF	MOSFET (Metal Oxide)	2.8 V	43 nC	Surface Mount	10 V	4.5 V	-55 °C	150 °C	100 V	5 W 44.5 W	20 V	40 A
Vishay Dale SIR878BDP-T1-RE3	PowerPAK® SO-8	14.4 mOhm	PowerPAK® SO-8	N-Channel	1850 pF 1850 pF	MOSFET (Metal Oxide)	3.4 V	38 nC	Surface Mount	10 V	7.5 V	-55 °C	150 °C	100 V	5 W 62.5 W	20 V	42.5 A	12 A

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