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STP10N80K5

STP10N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.470 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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STP10N80K5

STP10N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.470 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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Description

General part information

STP10N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP10N80K5
Current - Continuous Drain (Id) (Tc)9 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)22 nC
Input Capacitance (Ciss) (Max)635 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)130 W
Rds On (Max)600 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)5 V

Pricing

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CAD

3D models and CAD resources for this part