Specification	SI5499DC-T1-E3

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	35 nC
Input Capacitance (Ciss) (Max)	1290 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	1206-8 ChipFET™
Power Dissipation (Max)	6.2 W, 2.5 W
Rds On (Max)	36 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	800 mV

SI5499 Series

Part	Vgs(th) (Max)	Mounting Type	Rds On (Max)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Technology	Gate Charge (Max)
Vishay Dale SI5499DC-T1-GE3	800 mV	Surface Mount	36 mOhm	5 V	4.5 V	1.5 V	P-Channel	8 V	2.5 W 6.2 W	1290 pF	8-SMD Flat Leads	-55 °C	150 °C	6 A	1206-8 ChipFET™	MOSFET (Metal Oxide)	35 nC
Vishay Dale SI5499DC-T1-E3	800 mV	Surface Mount	36 mOhm	5 V	4.5 V	1.5 V	P-Channel	8 V	2.5 W 6.2 W	1290 pF	8-SMD Flat Leads	-55 °C	150 °C	6 A	1206-8 ChipFET™	MOSFET (Metal Oxide)	35 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources