Specification	IRF540STRRPBF

Current - Continuous Drain (Id) (Tc)	28 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	72 nC
Input Capacitance (Ciss) (Max)	1700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	150 W, 3.7 W
Rds On (Max)	77 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF540 Series

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package Name	Input Capacitance (Ciss) (Max)	Mounting Type
Vishay Dale IRF540SPBF	MOSFET (Metal Oxide)	10 V	4 V	72 nC	3.7 W 150 W	77 mOhm	-55 °C	175 °C	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	28 A	100 V	TO-263 (D2PAK)	1700 pF	Surface Mount
Vishay Dale IRF540PBF-BE3	MOSFET (Metal Oxide)	10 V	4 V	72 nC	150 W	77 mOhm	-55 °C	175 °C	N-Channel	TO-220-3	20 V	28 A	100 V	TO-220AB	1700 pF	Through Hole
Vishay Dale IRF540L	MOSFET (Metal Oxide)	10 V	4 V	72 nC		77 mOhm	-55 °C	175 °C	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	20 V	28 A	100 V	TO-262	1700 pF	Through Hole
Vishay Dale IRF540STRRPBF	MOSFET (Metal Oxide)	10 V	4 V	72 nC	3.7 W 150 W	77 mOhm	-55 °C	175 °C	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	28 A	100 V	TO-263 (D2PAK)	1700 pF	Surface Mount
Vishay Dale IRF540STRLPBF	MOSFET (Metal Oxide)	10 V	4 V	72 nC	3.7 W 150 W	77 mOhm	-55 °C	175 °C	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	28 A	100 V	TO-263 (D2PAK)	1700 pF	Surface Mount

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