PSMN3R5-25MLDX

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Nexperia USA Inc.

N-CHANNEL 25 V, 3.72 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY

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PSMN3R5-25MLDX

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Nexperia USA Inc.

N-CHANNEL 25 V, 3.72 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN3R5 Series

120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN3R5-25MLDX

Current - Continuous Drain (Id) (Tc)	70 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	18.9 nC
Input Capacitance (Ciss) (Max)	1334 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-LFPAK33 (5-Lead), SOT-1210
Package Name	LFPAK33
Power Dissipation (Max)	65 W
Rds On (Max)	3.72 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

PSMN3R5 Series

N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	Vgs(th) (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	FET Feature	Gate Charge (Max)	FET Type	Input Capacitance (Ciss) (Max)	Vgs (Max)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Nexperia USA Inc. PSMN3R5-40YSDX	3.6 V	Surface Mount	10 V	3.5 mOhm	40 V	115 W	MOSFET (Metal Oxide)	120 A	-55 °C	175 °C	SC-100 SOT-669	Schottky Diode (Body)	19 nC	N-Channel	3245 pF	20 V	LFPAK56 Power-SO8
Nexperia USA Inc. PSMN3R5-25MLDX	2.2 V	Surface Mount		3.72 mOhm	25 V	65 W	MOSFET (Metal Oxide)	70 A	-55 °C	175 °C	8-LFPAK33 (5-Lead) SOT-1210	Schottky Diode (Body)	18.9 nC	N-Channel	1334 pF	20 V	LFPAK33	10 V	4.5 V
Nexperia USA Inc. PSMN3R5-80PS,127	4 V	Through Hole	10 V	3.5 mOhm	80 V	338 W	MOSFET (Metal Oxide)	120 A	-55 °C	175 °C	TO-220-3		139 nC	N-Channel	9961 pF	20 V	TO-220AB
Nexperia USA Inc. PSMN3R5-30YL,115	2.15 V	Surface Mount		3.5 mOhm	30 V	74 W	MOSFET (Metal Oxide)	100 A	-55 °C	175 °C	SC-100 SOT-669		41 nC	N-Channel	2458 pF	20 V	LFPAK56 Power-SO8	10 V	4.5 V