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Description

General part information

DRA2523 Series

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 200 mW Surface Mount MINI3-G3-B

Technical Specifications

Parameters and characteristics for this part

SpecificationDRA2523E0L
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)40
Mounting TypeSurface Mount
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameMINI3-G3-B
Power - Max200 mW
Resistor - Base (R1) Resistance2.2 kOhm
Resistor - Emitter Base (R2)2.2 kOhms
Transistor TypePre-Biased, PNP
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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