DMS3015SSS-13

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Search across all available documentation for this part.

Active

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMS3015SSS-13

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1276 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	1.55 W
Rds On (Max) @ Id, Vgs	11.9 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2.5 V

NRND = Not Recommended for New Design

Part	Supplier Device Package	Mounting Type	Power Dissipation (Max) [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Diodes Inc DMS3015SSS-13	8-SO	Surface Mount	1.55 W	8-SOIC	3.9 mm	0.154 in	1276 pF	11 A	N-Channel	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2.5 V	12 V	4.5 V 10 V	Schottky Diode (Body)	30.6 nC	11.9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NRND = Not Recommended for New Design

Technical documentation and resources