Specification	IRS2113MPBF

Channel Type	Independent
Current - Peak Output (Sink)	2.5 A
Current - Peak Output (Source)	2.5 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	17 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Leads	14 Leads
Package Length	4 mm
Package Name	16-MLPQ, 16-VFQFN Exposed Pad
Package Width	4 mm
Rise Time (Typ)	25 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2113 Series

Part	Gate Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Input Type	Logic Voltage - VIH	Logic Voltage - VIL	Package Name	Package Width	Package Length	Rise Time (Typ)	Fall Time (Typ)	Operating Temperature (Min)	Operating Temperature (Max)	High Side Voltage - Max (Bootstrap)	Driven Configuration	Mounting Type	Package Leads	Gate Channel	Channel Type	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)
INFINEON IRS2113MPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Non-Inverting	9.5 V	6 V	16-MLPQ 16-VFQFN Exposed Pad	4 mm	4 mm	25 ns	17 ns	-40 °C	150 °C	600 V	Half-Bridge	Surface Mount	14 Leads	N-Channel	Independent	2	2.5 A	2.5 A
INFINEON IRS2113MTRPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Non-Inverting	9.5 V	6 V	16-MLPQ 16-VFQFN Exposed Pad	4 mm	4 mm	25 ns	17 ns	-40 °C	150 °C	600 V	Half-Bridge	Surface Mount	14 Leads	N-Channel	Independent	2	2.5 A	2.5 A
INFINEON IRS2113STRPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Non-Inverting	9.5 V	6 V	16-SOIC	7.5 mm	0.295 in	25 ns	17 ns	-40 °C	150 °C	600 V	Half-Bridge	Surface Mount		N-Channel	Independent	2	2.5 A	2.5 A

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