Specification	SIHA6N80E-GE3

Current - Continuous Drain (Id) (Tc)	5.4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	44 nC, 44 nC
Input Capacitance (Ciss) (Max)	827 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max)	940 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHA6 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Gate Charge (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Technology	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Power Dissipation (Max)
Vishay Dale SIHA6N65E-E3	10 V	4 V	48 nC 48 nC	600 mOhm	1640 pF	MOSFET (Metal Oxide)	TO-220-3 Full Pack	650 V	30 V	7 A	N-Channel	TO-220 Full Pack	-55 °C	150 °C	Through Hole	31 W
Vishay Dale SIHA6N80AE-GE3	10 V	4 V	22.5 nC	950 mOhm	422 pF	MOSFET (Metal Oxide)	TO-220-3 Full Pack	800 V	30 V	5 A	N-Channel	TO-220 Full Pack	-55 °C	150 °C	Through Hole	30 W
Vishay Dale SIHA6N80E-GE3	10 V	4 V	44 nC 44 nC	940 mOhm	827 pF	MOSFET (Metal Oxide)	TO-220-3 Full Pack	800 V	30 V	5.4 A	N-Channel	TO-220 Full Pack	-55 °C	150 °C	Through Hole	31 W

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