Specification	APTM100DSK35T3G

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	22 A
Drain to Source Voltage (Vdss)	1000 V
Gate Charge (Max)	186 nC
Input Capacitance (Ciss) (Max)	5200 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	SP3
Package Name	SP3
Power - Max	390 W
Rds On (Max)	420 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	5 V

APTM100 Series

1000V/Single switch + series and parallel diode/Si MOSFET

Part	Current - Continuous Drain (Id)	Gate Charge (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Rds On (Max)	Power - Max	Input Capacitance (Ciss) (Max)	Technology	Channel Count	Configuration - Features	Configuration	FET Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)
Microchip Technology APTM100A23STG	36 A	308 nC	SP4	1000 V	Chassis Mount	SP4	-40 °C	150 °C	5 V	270 mOhm	694 W	8700 pF	MOSFET (Metal Oxide)	2	Half Bridge	N-Channel
Microchip Technology APTM100A18FTG	43 A	372 nC 372 nC	SP4	1000 V	Chassis Mount	SP4	-40 °C	150 °C	5 V	210 mOhm	780 W	10400 pF	MOSFET (Metal Oxide)	2	Half Bridge	N-Channel
Microchip Technology APTM100H45FT3G	18 A	154 nC	SP3	1000 V	Chassis Mount	SP3	-40 °C	150 °C	5 V	540 mOhm	357 W	4350 pF	MOSFET (Metal Oxide)	4	Full Bridge	N-Channel
Microchip Technology APTM100AM90FG	78 A	744 nC	SP6	1000 V	Chassis Mount	SP6	-40 °C	150 °C	5 V	105 mOhm	1250 W	20700 pF	MOSFET (Metal Oxide)	2	Half Bridge	N-Channel
Microchip Technology APTM100H18FG	43 A	372 nC 372 nC	SP6	1000 V	Chassis Mount	SP6	-40 °C	150 °C	5 V	210 mOhm	780 W	10400 pF	MOSFET (Metal Oxide)	4	Full Bridge	N-Channel
Microchip Technology APTM100UM60FAG		1116 nC	SP6	1000 V	Chassis Mount	SP6	-40 °C	150 °C	5 V	70 mOhm		31100 pF 31100 pF	MOSFET (Metal Oxide)				N-Channel	30 V	2272 W	10 V	129 A
Microchip Technology APTM100UM45FAG		1602 nC	SP6	1000 V	Chassis Mount	SP6	-40 °C	150 °C	5 V	52 mOhm		42700 pF	MOSFET (Metal Oxide)				N-Channel	30 V	5000 W	10 V	215 A
Microchip Technology APTM100DSK35T3G	22 A	186 nC	SP3	1000 V	Chassis Mount	SP3	-40 °C	150 °C	5 V	420 mOhm	390 W	5200 pF	MOSFET (Metal Oxide)	2	Dual	N-Channel
Microchip Technology APTM100H45SCTG	18 A	154 nC	SP4	1000 V	Chassis Mount	SP4	-40 °C	150 °C	5 V	540 mOhm	357 W	4350 pF	MOSFET (Metal Oxide)	4	Full Bridge	N-Channel
Microchip Technology APTM100UM65SAG		1068 nC	SP6	1000 V	Chassis Mount	SP6	-40 °C	150 °C	5 V			28500 pF	MOSFET (Metal Oxide)				N-Channel	30 V	3250 W	10 V	145 A

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Technical documentation and resources

APTM100DSK35T3G Datasheet

Mounting Instructions for SP1F and SP3F Power Modules

APTM100DSK35T3G | Datasheet