Specification	SI3407DV-T1-BE3

Current - Continuous Drain (Id) (Ta)	7.5 A
Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	63 nC
Input Capacitance (Ciss) (Max)	1670 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	2 W, 4.2 W
Rds On (Max)	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

SI3407 Series

Part	Vgs (Max)	Input Capacitance (Ciss) (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Technology	Package Name	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Gate Charge (Max)	Package / Case	Power Dissipation (Max)
Vishay Dale SI3407DV-T1-BE3	12 V	1670 pF	P-Channel	7.5 A	8 A	MOSFET (Metal Oxide)	6-TSOP	2.5 V	4.5 V	20 V	1.5 V	Surface Mount	-55 °C	150 °C	24 mOhm	63 nC	SOT-23-6 Thin TSOT-23-6	2 W 4.2 W
Vishay Dale SI3407DV-T1-E3	12 V	1670 pF	P-Channel		8 A	MOSFET (Metal Oxide)	6-TSOP	2.5 V	4.5 V	20 V	1.5 V	Surface Mount	-55 °C	150 °C	24 mOhm	63 nC	SOT-23-6 Thin TSOT-23-6	2 W 4.2 W
Vishay Dale SI3407DV-T1-GE3	12 V	1670 pF	P-Channel		8 A	MOSFET (Metal Oxide)	6-TSOP	2.5 V	4.5 V	20 V	1.5 V	Surface Mount	-55 °C	150 °C	24 mOhm	63 nC	SOT-23-6 Thin TSOT-23-6	4.2 W

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