1SS401(TE85L,F)

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 300MA SC70

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 300MA SC70

Technical Specifications

Parameters and characteristics for this part

Specification	1SS401(TE85L,F)

Capacitance @ Vr, F	46 pF
Current - Average Rectified (Io)	300 mA
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SC-70, SOT-323
Speed	200 mA, 500 ns
Supplier Device Package	SC-70
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	450 mV

DIODE SCHOTTKY 20V 300MA SC70

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction	Mounting Type	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Package / Case
Toshiba Semiconductor and Storage 1SS401(TE85L,F)	300 mA	50 µA	450 mV	Schottky	125 °C	Surface Mount	200 mA, 500 ns	SC-70	20 V	46 pF	SC-70, SOT-323

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General part information

Diode 20 V 300mA Surface Mount SC-70

Technical documentation and resources