Description
General part information
2ED1322 Series
EiceDRIVER™ 1200 Vhalf-bridge gate driver ICwith typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 VSiC MOSFETandIGBTpower devices. The 2ED1322S12M is based on ourSOI-technologywhich has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED1322S12MXUMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 4.6 A |
| Current - Peak Output (Source) | 2.3 A |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 48 ns |
| Gate Type | IGBT, SiC MOSFET |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 1.7 V |
| Logic Voltage - VIL | 1.1 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.295 in |
| Package Name | 16-SOIC, PG-DSO-16-U02 |
| Package Width | 7.5 mm |
| Rise Time (Typ) | 48 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 13 V |
Pricing
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