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SCTWA90N65G2V

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STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 119 A, 18 MOHM (TYP. TJ = 25 C) IN AN HIP247 LONG LEADS PACKAGE

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DocumentsUM1575+27

SCTWA90N65G2V

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 119 A, 18 MOHM (TYP. TJ = 25 C) IN AN HIP247 LONG LEADS PACKAGE

Deep-Dive with AI

DocumentsUM1575+27

Technical Specifications

Parameters and characteristics for this part

SpecificationSCTWA90N65G2V
Current - Continuous Drain (Id) @ 25°C119 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]157 nC
Input Capacitance (Ciss) (Max) @ Vds3380 pF
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)565 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device PackageTO-247 Long Leads
Vgs (Max) [Max]22 V
Vgs (Max) [Min]-10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 36.06
30$ 29.90
120$ 28.03
NewarkEach 1$ 44.96
5$ 43.29
10$ 41.61
25$ 37.71
50$ 37.67
100$ 33.87
250$ 33.42

Description

General part information

SCTWA90N65G2V Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.