IXFH42N50P2

Obsolete

IXYS

MOSFET N-CH 500V 42A TO247AD

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Obsolete

IXYS

MOSFET N-CH 500V 42A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH42N50P2

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	830 W
Rds On (Max) @ Id, Vgs	145 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Supplier Device Package
IXYS IXFH42N50P2	500 V	N-Channel	42 A	145 mOhm	830 W	30 V	92 nC	-55 °C	150 °C	Through Hole	10 V	4.5 V	5300 pF	TO-247-3	MOSFET (Metal Oxide)	TO-247AD (IXFH)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 42A (Tc) 830W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources

No documents available