IXKR25N80C
ObsoleteDISCMSFT NCHSUPRJUNCC3-CLASS ISO247/+247
IXKR25N80C
ObsoleteDISCMSFT NCHSUPRJUNCC3-CLASS ISO247/+247
Description
General part information
IXKR25N80 Series
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG.
Technical Specifications
Parameters and characteristics for this part
| Specification | IXKR25N80C |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 25 A, 25 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 355 nC |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | ISOPLUS247™ |
| Rds On (Max) | 150 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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