DMT10H009LSSQ-13
ActiveDiodes Inc
100V N-CHANNEL ENHANCEMENT MODE MOSFET
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DMT10H009LSSQ-13
ActiveDiodes Inc
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT10H009LSSQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A, 48 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40.2 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2309 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 1.8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 9 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.48 | |
| 5000 | $ 0.45 | |||
| 7500 | $ 0.44 | |||
| 12500 | $ 0.42 | |||
| 17500 | $ 0.41 | |||
Description
General part information
DMT10H009LSSQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: high-frequency switching, synchronous rectifications, and DC-DC converters.
Documents
Technical documentation and resources