GE17042BCA3

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SIC 2N-CH 1700V 425A MODULE

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SIC 2N-CH 1700V 425A MODULE

Description

General part information

Mosfet Array 1700V (1.7kV) 425A (Tc) 1250W Chassis Mount Module

Parameters and characteristics for this part

Specification	GE17042BCA3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	425 A
Drain to Source Voltage (Vdss)	1700 V
Gate Charge (Max)	1207 nC
Input Capacitance (Ciss) (Max)	29100 pF
Mounting Type	Chassis Mount
Operating Temperature	175 °C
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	Module
Package Name	Module
Power - Max	1250 W
Qualification	AEC-Q101
Rds On (Max)	4.45 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	4.5 V

Part	Package Name	Current - Continuous Drain (Id) (Tc)	Qualification	Gate Charge (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Technology	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max)	Mounting Type	Power - Max	Operating Temperature (Min)	Operating Temperature (Max)	Channel Count	Configuration	Configuration - Features	Operating Temperature
GE Aerospace GE17042BCA3	Module	425 A	AEC-Q101	1207 nC	4.5 V	29100 pF	Silicon Carbide (SiC)	Module	1700 V	4.45 mOhm	Chassis Mount	1250 W	-55 °C	175 °C	2	N-Channel	Dual	175 °C

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